PURPOSE: To thin a section between a photosensitive region and a light-shielding film, and to prevent the degradation of the characteristics of an image due to the irregular irradiation of beams by burying a light-shielding metallic layer in an insulating film formed before the metallic layer is formed.

CONSTITUTION: Impurity diffusion layers 102, 103 and insulating films 104, 105 and further a polycrystalline silicon film 106 and the like are formed in order to manufacture a predetermined image sensor on a silicon substrate 101, and the insulating film 107 aiming at insulation and protection is formed. An aluminum film 108 is formed so as to be buried in the insulating film 107. For that, a region such as a region except a region to which the aluminum film 108 must be formed is coated with a photo-resist, and the insulating film 107 is removed selectively while using the resist as a mask. Aluminum is evaporated, and aluminum except a desired region is removed together with the resist.