Title:
PHOTOSEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS60164369
Kind Code:
A
Abstract:
PURPOSE:To provide a photosemiconductor element with a function to control photooutput of either laser beams or natural light corresponding to photoinput by a method wherein the first conductive type semiconductor region with high concentration at low level is formed on a position wherein a part of light emitted in a light emitting layer and signal photoinput are inputted. CONSTITUTION:An n type GaAs layer 21, a p type GaAs layer 22 with high concentration at deep level, a p type Al0.3Ga0.7As layer 23, a p type Al0.3Ga0.7As layer 24, a p type GaAs light emitting layer 25, an n type Al0.3Ga0.7As layer 26 are successively formed on an n type GaAs substrate 20 by means of e.g. liquid epitaxial process. At this time, in the p type GaAs layer 22, acceptors such as Ge, Zn, Si etc. at high level are added to Fe, Cr, Ni etc. at low level with concentration of 10<17>cm<-3> order and similar extent. Then parts of the p type Al0.3 Ga0.7As layer 24, the p type GaAs light emitting layer 25 and n type Al0.3Ga0.7As layer 26 are left into mesa type removing all other parts by etching process. Finally a light inputting window 27 concentric circular to the mesa may be left on the surface of p type Al0.3Ga0.7As layer 23 to form other p type ohmic electrode 28 made of AuZn alloy.
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Inventors:
UJI TOSHIO
Application Number:
JP1961184A
Publication Date:
August 27, 1985
Filing Date:
February 06, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/12; H01L31/14; H01L31/153; H01L33/14; H01L33/20; H01L33/30; H01L33/40; (IPC1-7): H01L31/14; H01L33/00
Attorney, Agent or Firm:
Uchihara Shin