PURPOSE: To contrive to reduce cost and to enhance reliability, by a method wherein a thin film of a temperature-sensitive semiconductor is provided on the surface of a glaze layer of an insulator substrate of a support for a data transfer device, an unrequired part of the film and the glaze layer therebeneath are dissolved away, and then a thin conductor film is provided and shaped.
CONSTITUTION: The thin film 8 of a temperature-sensitive semiconductor 8 is provided on the surface of the glaze layer 7 of the insulator substrate 5. A photoresist is applied to the film 8, followed by exposure through a mask and development to provide a photoresist layer 9. Then, unrequired parts of the film 8 and the glaze layer 7 are simultaneously dissolved away by common etching. Further, the photoresist layer 9 is dissolved away, then the thin conductor film 14 is provided, a photoresist is applied to the surface of the film 14, and exposure is conducted by using a mask, followed by development to provide a photoresist layer 15. Then, an unrequired part of the film 14 and the photoresist layer 15 are dissolved away. Accordingly, the data transfer device 18 can be obtained which comprises the residual part 12 of the glaze layer beneath the thin film 11 of the temperature-sensitive semiconductor with a desired shape and comprises electrode terminals 17.
| WO/2012/111205 | NONVOLATILE VARIABLE RESISTANCE ELEMENT |
| JP2013122985 | SEMICONDUCTOR MEMORY DEVICE |
HATSUTORI OSAMU
NAKAJIMA TOSHIHIKO
OZAWA NAOHIRO
