Title:
深層学習人工ニューラルネットワークにおけるアナログニューラルメモリセルの超精密チューニング
Document Type and Number:
Japanese Patent JP7418602
Kind Code:
B2
Abstract:
Examples for ultra-precise tuning of a selected memory cell are disclosed. In one example, a method of programming a first memory cell in a neural memory to a target value is disclosed, the method comprising programming a second memory cell by applying programming voltages to terminals of the second memory cell; and determining if an output of the first memory cell has reached the target value.
Inventors:
Remke, Stephen
Tran, Huban
Kachev, lily
Schneider, Louisa
Omni, Henry
Boo, Sun
Doe, Nan
Tiwari, bipin
Tran, Huban
Kachev, lily
Schneider, Louisa
Omni, Henry
Boo, Sun
Doe, Nan
Tiwari, bipin
Application Number:
JP2022550938A
Publication Date:
January 19, 2024
Filing Date:
August 31, 2020
Export Citation:
Assignee:
SILICON STORAGE TECHNOLOGY, INC.
International Classes:
G11C16/10; G06N3/065; G11C11/54; H01L21/336; H01L29/788; H01L29/792; H10B41/30
Domestic Patent References:
| JP2010123210A | ||||
| JP2010530112A | ||||
| JP2021517706A |
Foreign References:
| WO2019177691A1 | ||||
| US8000141 |
Attorney, Agent or Firm:
Patent Attorney Corporation Wisdom International Patent and Trademark Office