PURPOSE: To attain miniaturization and simplification by installing a heating member covering an inner tube in a lower U-shaped tube and thermally decomposing an unreacted gas at the time of epitaxial growth at a position opposite to a susceptor in the lower U-shaped tube and collectively heating the susceptor and the heating member.

CONSTITUTION: A substrate 12 for epitaxial growth composed of sapphire is mounted onto a susceptor 13, and the inside of a U-shaped tube 11 is evacuated. The mixed gas of dimethylcadmium gas, diethyltellurium gas and hydrogen gas is introduced into the U-shaped tube 11 from a gas introducing tube 15, the susceptor 13 is heated by applying high-frequency power to a high-frequency induction coil 16, the gas for epitaxial growth induced into the U-shaped tube 11 is decomposed, and the epitaxial layer of CdTe is grown on the substrate 12. Even a heating member 14 is heated collectively by the high-frequency induction heating coil 16 at the same time. Accordingly, the unreacted gas for epitaxial growth at the time of epitaxial growth is thermally decomposed easily, and decomposed respectively into a gas such as methane gas, ethane gas, etc., and a metal such as tellurium and cadmium, and toxic substances are removed.