PURPOSE: To attain uniformity of film thickness, by installing a top plate and a partition plate made of transparent quartz only at the part in which Ir lamps faces a susceptor for placing a semiconductor substrate.
CONSTITUTION: A reaction vessel consists of a metallic housing comprising a stand 6, a support frame 7, and a fixed frame 9; and a top plate 8. The insides of the frames 7 and 9 are provided with holes 10 for circulating cooling water. The susceptor 11 for supporting a semiconductor substrate 12 is installed in the reaction vessel consisting of the housing and the top plate 8. The partition plate 13 made of transparent quartz is held between the plate 8 and the susceptor 11 and on a level changed part 14 formed on a part of the frame 7. IR heating lamps 16 are installed facing the surface of the susceptor 11 through the plates 13 and 8.
| JPH0394061 | PRODUCTION OF TUNGSTEN CRUCIBLE |
| JP2003007796 | SUBSTRATE TREATMENT DEVICE |
| JP2005533181 | Pulse nucleation deposition of tungsten layer |
NOZAKI JIYUNICHI
MIZUGUCHI SHINICHI
