Title:
WET ETCHING METHOD OF PROCESSING OBJECT SUBSTRATE
Document Type and Number:
Japanese Patent JP3849023
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a fine three-dimensional image without using a photolithography technology.
SOLUTION: A first step S1 selectively irradiates FIB onto a processing object substrate such as a monocrystal silicon substrate. In that case, dose quantity of the FIB, a dot pitch, and accelerating voltage are adjusted according to the height of a projecting part to be formed. The masking effect to an etching liquid is revealed in an FIB irradiation part by this FIB irradiation. A second step S2 removes a natural oxide film formed on a substrate surface by being processed by a buffered hydrofluoric acid (BHF). After performing flowing water cleaning in a third step S3, ultrasonic cleaning is performed by using pure water and acetone in a fourth step S4. A fifth step S5 etches the FIB irradiation surface of the processing object substrate by being soaked in a KOH aqueous solution. Afterwards, a sixth step S6 observes a level difference by AFM for confirmation.
Inventors:
Kashi Ashida
Morita Noboru
Koichi Shibata
Atsushi Taniguchi
Miyamoto Iwao
Morita Noboru
Koichi Shibata
Atsushi Taniguchi
Miyamoto Iwao
Application Number:
JP2003063242A
Publication Date:
November 22, 2006
Filing Date:
March 10, 2003
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
B81C1/00; B81B1/00; H01L21/306; (IPC1-7): B81C1/00; H01L21/306; //B81B1/00
Domestic Patent References:
| JP6012963A | ||||
| JP2001015484A | ||||
| JP4355909A | ||||
| JP4190984A | ||||
| JP63281488A | ||||
| JP61256632A |