Title:
リフトオフ方法
Document Type and Number:
Japanese Patent JP7474138
Kind Code:
B2
Abstract:
To allow appropriate execution of peeling of an epitaxy wafer on which a wafer ID is formed when transferring an optical device layer of an optical device wafer to a transfer substrate.SOLUTION: A lift-off method includes the steps of: bonding a transfer substrate 91 to a surface of an optical device layer 902 of an optical device wafer 90 with an adhesive therebetween; grinding, with a grindstone 1641, a wafer ID 909 formed on one face 908 of an epitaxy wafer 900 of an adhesion workpiece 9 having the transfer substrate 91 held on a holding surface to form a surface to be ground 907 connected with an unground surface 906 of one face 908 and remove the wafer ID 909; polishing the surface to be ground 907 and the boundary between the surface to be ground 907 and the surface 906 not ground by the grindstone 1641; forming a peeling layer 983 on a buffer layer 98 with a laser beam; and applying an external force to the peeling layer 983 to peel the epitaxy wafer 900 from the transfer substrate 91 and transfer the optical device layer 902 to the transfer substrate 91.SELECTED DRAWING: Figure 20
Inventors:
Yu the Great
Masaru Koyanagi
Masaru Koyanagi
Application Number:
JP2020113982A
Publication Date:
April 24, 2024
Filing Date:
July 01, 2020
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/304; B23K26/57; B24B9/00; B24B37/005; B24B49/16
Domestic Patent References:
| JP2013149717A | ||||
| JP201546420A | ||||
| JP201820398A | ||||
| JP2018206890A | ||||
| JP2018148140A |
Attorney, Agent or Firm:
Patent Attorney Corporation Tokyo Alpa Patent Office
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