Title:
パワー半導体モジュール
Document Type and Number:
Japanese Patent JP7221930
Kind Code:
B2
Abstract:
The present invention provides a power semiconductor module, including a substrate having an electric insulating main layer being provided with a structured top metallization and with a bottom metallization, wherein the top metallization is provided with at least one power semiconductor device and at least one contact area, wherein the main layer together with its top metallization and the at least one power semiconductor device is embedded in a mold compound such that the mold compound includes at least one opening for contacting the at least one contact area, and wherein power semiconductor module includes a housing with circumferential side walls, wherein the side walls are positioned above the main layer of the substrate so that the side walls are only present in a space above a plane through the main layer of the substrate.
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Inventors:
Trussels, dominique
Hartmann, Samuel
Guyon, David
Hartmann, Samuel
Guyon, David
Application Number:
JP2020501184A
Publication Date:
February 14, 2023
Filing Date:
July 10, 2018
Export Citation:
Assignee:
HITACHI ENERGY SWITZERLAND AG
International Classes:
H01L25/07; H01L21/56; H01L23/12; H01L25/18
Domestic Patent References:
| JP2010129797A | ||||
| JP2009044152A | ||||
| JP2017028132A | ||||
| JP11340374A | ||||
| JP2013225555A |
Foreign References:
| WO2015174158A1 | ||||
| EP0962974A2 |
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office
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