Title:
Process condition detection devices and methods for plasma chambers
Document Type and Number:
Japanese Patent JP6316898
Kind Code:
B2
Abstract:
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).
Inventors:
Jensen Earl
Sun May
Sun May
Application Number:
JP2016201451A
Publication Date:
April 25, 2018
Filing Date:
October 13, 2016
Export Citation:
Assignee:
KLA-Tenker Corporation
International Classes:
H05H1/00; H01L21/3065; H01L21/31
Domestic Patent References:
| JP2006505940A | ||||
| JP2002100617A | ||||
| JP2004507889A | ||||
| JP2009535855A | ||||
| JP2001501022A | ||||
| JP2009059880A | ||||
| JP2003282546A | ||||
| JP2007502519A |
Foreign References:
| US20060043063 | ||||
| US20060171848 | ||||
| US6830650 | ||||
| US20030197175 | ||||
| US20050032253 | ||||
| US6159864 | ||||
| US20040007326 |
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office