WAFER PROCESSING METHOD

Japanese Patent JP2017107921

A

PROBLEM TO BE SOLVED: To divide a wafer having a plurality of devices formed on its surface and a laminate laminated on scheduled division lines without worsening the device flexural strength into the individual devices.SOLUTION: A wafer processing method comprises the steps of: irradiating a wafer 2 with a laser beam from the backside along each scheduled division line with a focus point positioned inside the wafer to form a quality-modified layer 25 therein, provided that the laser beam has a wavelength permeable to the wafer; coating a wafer surface with a water-soluble resin to form a protection film 600; irradiating the wafer with a laser beam through the protection film along each scheduled division line to remove a laminate 21 by ablation processing, provided that the laser beam has a wavelength absorbable in the laminate; dividing the wafer into individual devices 23 by application of an external force; and removing the protection film coating the wafer surface by rinsing the wafer surface. The method further comprises the following step after the laminate removing step or dividing step: supplying plasma of an etching gas to the wafer from its surface side to eliminate a damage attributed to the ablation processing in the laminate removing step.SELECTED DRAWING: Figure 10

NAKAMURA MASARU

JP2015238875A

June 15, 2017

December 07, 2015

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DISCO ABRASIVE SYSTEMS LTD

H01L21/301; B23K26/351; B23K26/53; H01L21/3065

JP2005252126A	2005-09-15
JP2013058536A	2013-03-28

US20150214111A1

2015-07-30

Naozumi Ono
Sachiko Okunuki
Kojino Koji

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