SEMICONDUCTOR LASER AND OPTICAL SEMICONDUCTOR MODULE

Title:

SEMICONDUCTOR LASER AND OPTICAL SEMICONDUCTOR MODULE

Document Type and Number:

Japanese Patent JP2017107920

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor laser which prevents an unintended electric field to couple to a laser electrode disposed on a chip.SOLUTION: A semiconductor laser has a laser part and a light modulator part which are manufactured on a substrate 202 and includes: a laser electrode 207 for inputting a driving signal to the laser part; an insulation body 321 produced on a part of the laser electrode; and a ground electrode 322 which is electrically separated from the laser electrode by the insulation body.SELECTED DRAWING: Figure 3

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Inventors:

KANAZAWA SHIGERU
OZAKI TSUNESUKE
UEDA YUTA

Application Number:

JP2015238874A

Publication Date:

June 15, 2017

Filing Date:

December 07, 2015

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01S5/022; G02F1/025; H01S5/026

Domestic Patent References:

JP2002329937A	2002-11-15
JP2002131712A	2002-05-09
JP2014179455A	2014-09-25

Foreign References:

US20030039017A1

2003-02-27

Other References:

KANAZAWA, SHIGERU ET AL.: "Low crosstalk and high modulation bandwidth 100GbE optical transmitter using flip-chip interconnects", INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS 2013 (IPRM), vol. TuD3-2, JPN6018044350, 19 May 2013 (2013-05-19)

Attorney, Agent or Firm:

Patent Business Corporation Tani/Abe Patent Office

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