ATOMIC LAYER GROWTH DEVICE

WIPO Patent Application WO/2016/190005

A1

An atomic layer growth device that forms a thin film upon a substrate and that is provided with: a film-formation container; a stage that is arranged inside the film-formation container; a susceptor that holds the substrate upon the stage; a mask that is arranged upon the substrate and that is large enough to surround the substrate; a vertically movable mask pin that supports the mask; and a mask-pin hole that vertically passes through the stage and the susceptor and that has the mask pin inserted therethrough such that the mask pin is vertically movable. The susceptor has: a susceptor main body that has a holding surface for the substrate; and a susceptor peripheral-edge section that is located at the perimeter of the susceptor main body and that is shorter in height than the holding surface. The mask-pin hole opens in the susceptor peripheral-edge section. An inactive-gas supply port that upwardly discharges gas to the perimeter of the holding surface is provided to the susceptor peripheral-edge section within the region surrounded by the mask. An inactive-gas supply path that supplies an inactive gas to the inactive-gas supply port is connected to the susceptor peripheral-edge section.

MATSUMOTO TATSUYA (JP)
WASHIO KEISUKE (JP)

PCT/JP2016/062400

December 01, 2016

April 19, 2016

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JAPAN STEEL WORKS LTD (JP)

H01L21/31; C23C16/04; C23C16/44; C23C16/455

WO2007116940A1

2007-10-18

JPH09115993A	1997-05-02
JP2000208439A	2000-07-28
JP2002302770A	2002-10-18

YOKOI Koki (JP)
Koki Yokoi (JP)

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