Title:
CONTROLLED GROWTH OF GALLIUM NITRIDE NANOSTRUCTURES
Document Type and Number:
WIPO Patent Application WO2005059973
Kind Code:
A3
Abstract:
A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nn FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.
Inventors:
PFEFFERLE LISA (US)
CIUPARU DRAGOS (US)
HAN JUNG (US)
HALLER GARY (US)
CIUPARU DRAGOS (US)
HAN JUNG (US)
HALLER GARY (US)
Application Number:
PCT/US2004/041725
Publication Date:
August 04, 2005
Filing Date:
December 13, 2004
Export Citation:
Assignee:
UNIV YALE (US)
PFEFFERLE LISA (US)
CIUPARU DRAGOS (US)
HAN JUNG (US)
HALLER GARY (US)
PFEFFERLE LISA (US)
CIUPARU DRAGOS (US)
HAN JUNG (US)
HALLER GARY (US)
International Classes:
C01B21/06; C23C16/04; C23C16/30; C30B25/00; C30B25/02; C30B29/40; C30B29/60; H01L21/302; H01L21/461; (IPC1-7): C30B29/40; C23C16/30; C30B25/00; C30B29/60
Foreign References:
| US20020130311A1 | 2002-09-19 | |||
| US6333016B1 | 2001-12-25 |
Other References:
WINKLER H ET AL: "QUANTUM-CONFINED GALLIUM NITRIDE IN MCM-41", ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, vol. 11, no. 17, 1 December 1999 (1999-12-01), pages 1444 - 1448, XP000893391, ISSN: 0935-9648
CHENG G S ET AL: "Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina", JOURNAL OF MATERIALS RESEARCH MATER. RES. SOC USA, vol. 15, no. 2, February 2000 (2000-02-01), pages 347 - 350, XP002330542, ISSN: 0884-2914
III-NITRIDE ZERO- AND ONE-DIMENSIONAL NANOSTRUCTURES BY MOCVD: "JUNG HAN ET AL", 12 August 2004, UKC US -KOREAN CONFERENCE PROCEEDING 2004, XP002330543
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; August 2001 (2001-08-01), PARALA H ET AL: "Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors", XP002330544, Database accession no. 7149448
CHENG G S ET AL: "Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina", JOURNAL OF MATERIALS RESEARCH MATER. RES. SOC USA, vol. 15, no. 2, February 2000 (2000-02-01), pages 347 - 350, XP002330542, ISSN: 0884-2914
III-NITRIDE ZERO- AND ONE-DIMENSIONAL NANOSTRUCTURES BY MOCVD: "JUNG HAN ET AL", 12 August 2004, UKC US -KOREAN CONFERENCE PROCEEDING 2004, XP002330543
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; August 2001 (2001-08-01), PARALA H ET AL: "Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors", XP002330544, Database accession no. 7149448
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