DIAPHRAGM, VALVE, AND METHOD FOR MANUFACTURING DIAPHRAGM

Title:

DIAPHRAGM, VALVE, AND METHOD FOR MANUFACTURING DIAPHRAGM

Document Type and Number:

WIPO Patent Application WO/2020/217960

Kind Code:

A1

Abstract:

Provided is a technique with which it is possible to appropriately control the size of particles entering a processing chamber during manufacture of a semiconductor.　A diaphragm (30) comprises a thin plate (31) made of metal, and a thin film layer (32) formed over the entire surface (wetted surface (31A)) on one side of the thin plate (31). The maximum value Rmax of the surface roughness of the thin film layer (32) is less than 0.1 μm.

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Inventors:

KONDO KENTA (JP)
INADA TOSHIYUKI (JP)
NAKATA TOMOHIRO (JP)
WATANABE KAZUNARI (JP)
NAKATA TOMOKI (JP)

Application Number:

PCT/JP2020/015584

Publication Date:

October 29, 2020

Filing Date:

April 06, 2020

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Assignee:

FUJIKIN KK (JP)

International Classes:

F16K7/12

Foreign References:

JP2004060741A	2004-02-26
JP2012026476A	2012-02-09
JP2001295948A	2001-10-26
JP2013249868A	2013-12-12

Attorney, Agent or Firm:

YAMASHITA Yuji (JP)

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