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Title:
DIELECTRIC FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2004/066376
Kind Code:
A1
Abstract:
A method for forming a high-K dielectric film on a substrate comprises a plurality of steps, each step including a processing for modifying the properties of the formed high-K dielectric film in an atmosphere mainly containing nitrogen.

Inventors:
XIAO SHIQIN (JP)
OHBA TAKAYUKI (JP)
Application Number:
PCT/JP2003/000369
Publication Date:
August 05, 2004
Filing Date:
January 17, 2003
Export Citation:
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Assignee:
FUJITSU LTD (JP)
XIAO SHIQIN (JP)
OHBA TAKAYUKI (JP)
International Classes:
C23C14/06; C23C16/30; C23C16/40; C23C16/455; C23C16/56; H01L21/20; H01L21/28; H01L21/31; H01L21/314; H01L21/316; H01L21/469; H01L29/51; C23C16/44; H01L21/02; (IPC1-7): H01L21/316; H01L21/318
Domestic Patent References:
WO1997040533A11997-10-30
Foreign References:
US20020106536A12002-08-08
US20020105048A12002-08-08
US6348420B12002-02-19
US20010023120A12001-09-20
US20020172768A12002-11-21
Attorney, Agent or Firm:
Itoh, Tadahiko (Yebisu Garden Place Tower 20-3, Ebisu 4-chom, Shibuya-ku Tokyo, JP)
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