Title:
DRIVING CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2008/088075
Kind Code:
A1
Abstract:
Provided is a driving circuit which suppresses a surge voltage at the time of switching a
power semiconductor element and reduces switching loss. An element (10) such as
an IGBT and another element (20) to be paired are connected, the element (10) is
driven by a driver (22), and a gate voltage is controlled by a control circuit (24).
When the power semiconductor element is turned off, a comparator (26) detects that
a voltage (Vak) of the element (20) is a prescribed voltage, the control circuit (24)
switches gate resistance from low resistance to high resistance to suppress the
surge voltage, and the switching loss is reduced. When the power semiconductor element
is turned on, start up of the voltage (Vak) is detected, and the control circuit
(24) switches the gate resistance from high resistance to low resistance after
a prescribed time to suppress the surge voltage, and the switching loss is reduced.
Inventors:
FUMA HIROO (JP)
KUNO HIROMICHI (JP)
HIROSE SATOSHI (JP)
TAKAMATSU NAOYOSHI (JP)
KUNO HIROMICHI (JP)
HIROSE SATOSHI (JP)
TAKAMATSU NAOYOSHI (JP)
Application Number:
PCT/JP2008/050930
Publication Date:
July 24, 2008
Filing Date:
January 17, 2008
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
FUMA HIROO (JP)
KUNO HIROMICHI (JP)
HIROSE SATOSHI (JP)
TAKAMATSU NAOYOSHI (JP)
FUMA HIROO (JP)
KUNO HIROMICHI (JP)
HIROSE SATOSHI (JP)
TAKAMATSU NAOYOSHI (JP)
International Classes:
H03K17/16; H02M1/08; H03K17/56
Foreign References:
| JP2004266368A | 2004-09-24 | |||
| JP2004253582A | 2004-09-09 | |||
| JPH05328746A | 1993-12-10 |
Attorney, Agent or Firm:
YOSHIDA, Kenji et al. (Kichijoji-honcho 1-chomeMusashino-shi, Tokyo 04, JP)
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