Title:
FILM FORMATION METHOD AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/090268
Kind Code:
A1
Abstract:
This film formation method comprises the following (A) to (C): (A) a substrate is prepared, which has, in different regions of the surface thereof, a first film and a second film formed from a different material than the first film; (B) a cleaning gas is supplied onto the surface of the substrate to remove contaminants on the surface of the substrate; and (C) after the contaminants are removed, an organic compound is supplied onto the surface of the substrate, thereby forming a self-assembled monolayer selectively on the surface of the second film with respect to the surface of the first film. In (B), the cleaning gas contains β-diketone.
Inventors:
KAWANO YUMIKO (JP)
AZUMO SHUJI (JP)
AZUMO SHUJI (JP)
Application Number:
PCT/JP2023/037404
Publication Date:
May 02, 2024
Filing Date:
October 16, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/316; C23C16/40; H01L21/31
Foreign References:
| JP2021057563A | 2021-04-08 | |||
| JPH10261715A | 1998-09-29 | |||
| JP2022099153A | 2022-07-04 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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