Title:
FILM FORMING METHOD AND FILM FORMING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/176535
Kind Code:
A1
Abstract:
A film forming method according to the present invention comprises the following steps (A) to (E). (A) A substrate which has a first film and a second film in different regions on the surface is prepared. (B) A self-assembled monolayer containing fluorine, the self-assembled monolayer inhibiting the formation of an object film, is formed on the surface of the second film. (C) A precursor gas of the object film is supplied after the step (B). (D) The object film is formed on the surface of the first film by supplying a reaction gas that reacts with the precursor gas to the surface of the substrate after the step (C). (E) The self-assembled monolayer is removed by means of a gas, which has been changed into a plasma, after the step (C) and before or after the step (D). A first cycle, which comprises one each of the steps (B), (C), (D) and (E), is repeated a plurality of times.
Inventors:
AZUMO SHUJI (JP)
KAWANO YUMIKO (JP)
FUSE TAKASHI (JP)
IKE SHINICHI (KR)
NAKAGAWA TOMOHIRO (JP)
KAWANO YUMIKO (JP)
FUSE TAKASHI (JP)
IKE SHINICHI (KR)
NAKAGAWA TOMOHIRO (JP)
Application Number:
PCT/JP2023/008247
Publication Date:
September 21, 2023
Filing Date:
March 06, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/04; C23C16/455; H01L21/31; H01L21/316; H01L21/318
Domestic Patent References:
| WO2022039032A1 | 2022-02-24 | |||
| WO2021132163A1 | 2021-07-01 | |||
| WO2020195903A1 | 2020-10-01 |
Foreign References:
| JP2021044534A | 2021-03-18 | |||
| US20190157079A1 | 2019-05-23 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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