Title:
A GROUP III-V COMPOUND SEMICONDUCTOR AND A METHOD FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO2006035852
Kind Code:
A8
Abstract:
A group 111-V compound semiconductor is provided. The group 111-V compound semiconductor comprises an n-type layer (1), a p-type layer (7) represented by a formula InaGabAlcN, having a thickness of not less than 300 nm. and a multiple quantum well structure which exists between the n-type layer and the p-type layer, has at least two quantum well structures (4) including two barrier layers (5) and a quantum well layer represented by InxGayAlzN between the barrier layers; and a ratio of R/a of not more than 42.5 %, wherein R is an average mole fraction of indium nitride in the quantum well layer, which is measured by X-ray diffraction, and a is a mole fraction of indium nitride calculated from a wavelength of light emitted from the group 111-V compound semiconductor due to current injection.
Inventors:
SASAKI MAKOTO (JP)
TAKADA TOMOYUKI (JP)
TAKADA TOMOYUKI (JP)
Application Number:
PCT/JP2005/017916
Publication Date:
June 21, 2007
Filing Date:
September 21, 2005
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
SASAKI MAKOTO (JP)
TAKADA TOMOYUKI (JP)
SASAKI MAKOTO (JP)
TAKADA TOMOYUKI (JP)
International Classes:
H01L33/06; H01L33/32
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