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Title:
PEROVSKITE/SILICON HETEROJUNCTION TANDEM SOLAR CELL AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/185464
Kind Code:
A1
Abstract:
The present invention relates to the technical field of solar cells, and specifically to a perovskite/silicon heterojunction tandem solar cell and a production method therefor. The solar cell comprises a silicon-based sub-cell and a perovskite sub-cell tandemly arranged on the silicon-based sub-cell. An intermediate layer or a recombination junction formed by a p-type heavily doped amorphous silicon layer and an n-type heavily doped amorphous silicon layer is provided between the silicon-based sub-cell and the perovskite sub-cell. According to the present invention, the p-type heavily doped amorphous silicon layer and the n-type heavily doped amorphous silicon layer are used as a carrier recombination junction, such that the production and device costs are greatly reduced, and in addition, the photocurrent density and conversion efficiency of the tandem cell can be improved.

Inventors:
BI ENBING (CN)
GUO TIE (CN)
BA QIANKAI (CN)
Application Number:
PCT/CN2023/081524
Publication Date:
October 05, 2023
Filing Date:
March 15, 2023
Export Citation:
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Assignee:
ADVANCED SOLAR TECH INSTITUTE XUANCHENG (CN)
International Classes:
H10K39/15; H01L31/0747; H01L31/20
Foreign References:
CN114792704A2022-07-26
CN113257940A2021-08-13
CN111987184A2020-11-24
CN113782566A2021-12-10
CN107564989A2018-01-09
CN113690340A2021-11-23
CN215680694U2022-01-28
CN213150795U2021-05-07
Attorney, Agent or Firm:
NANJING JIANGQIAO PATENT AGENCY CO., LTD. (CN)
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