Title:
HIGH-PURITY SIC CERAMIC PREPARED BY NORMAL-PRESSURE SOLID PHASE SINTERING AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/244484
Kind Code:
A1
Abstract:
Provided are a high-purity SiC ceramic prepared by normal-pressure solid-phase sintering and a preparation method therefor. The preparation method for the high-purity SiC ceramic comprises: (1) adding α-SiC powder and an aqueous solution containing a sintering aid into a solvent and mixing to obtain SiC slurry, wherein the sintering aid comprises a B source and a C source, the B source is boric acid, and the C source is selected from at least one of D-fructose and glucose; (2) drying and forming the SiC slurry to obtain an SiC blank; (3) conducting vacuum debonding to the SiC blank, placing the debonded SiC blank in an inert atmosphere, and sintering for 30-120 minutes at 2,050°C-2,250°C to obtain the high-purity SiC ceramic. The addition amount of the element B in the B source accounts for 0.1-1wt% of the mass of the α-SiC powder, and the addition amount of the element C in the C source does not exceed 5 wt% of the mass of the α-SiC powder.
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Inventors:
YANG YONG (CN)
LIU MENG (CN)
HUANG ZHENGREN (CN)
YAO XIUMIN (CN)
LIU XUEJIAN (CN)
LIU MENG (CN)
HUANG ZHENGREN (CN)
YAO XIUMIN (CN)
LIU XUEJIAN (CN)
Application Number:
PCT/CN2020/093788
Publication Date:
December 10, 2020
Filing Date:
June 01, 2020
Export Citation:
Assignee:
SHANGHAI INST CERAMICS CAS (CN)
International Classes:
C04B35/565; C04B35/575
Foreign References:
| CN110204338A | 2019-09-06 | |||
| DE102012012227A1 | 2013-01-03 | |||
| CN106904974A | 2017-06-30 | |||
| US6001756A | 1999-12-14 | |||
| CN105884366A | 2016-08-24 | |||
| EP0771771A2 | 1997-05-07 | |||
| US20070117722A1 | 2007-05-24 |
Attorney, Agent or Firm:
HANQIAO PATENT (CN)
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