INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM

Title:

INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM

Document Type and Number:

WIPO Patent Application WO/2010/090038

Kind Code:

A1

Abstract:

Disclosed is a material for an insulating film for use in plasma CVD. The material comprises a silicon compound having two hydrocarbon groups that can be bound to each other to form a cyclic structure in cooperation with a silicon atom or having at least one branched hydrocarbon group. In the branched hydrocarbon group, an α-carbon which is a carbon atom bound to a silicon atom constitutes a methylene group, and a β-carbon which is a carbon atom bound to the methylene group or a γ-carbon which is a carbon atom bound to the β-carbon is the branching point.

Inventors:

TAJIMA NOBUO (JP)
NAGANO SHUJI (JP)
INAISHI YOSHIAKI (JP)
SHIMIZU HIDEHARU (JP)
OHASHI YOSHI (JP)
KADA TAKESHI (JP)
MATSUMOTO SHIGEKI (JP)
XU YONG HUA (JP)

Application Number:

PCT/JP2010/000704

Publication Date:

August 12, 2010

Filing Date:

February 05, 2010

Export Citation:

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Assignee:

NAT INST FOR MATERIALS SCIENCE (JP)
TAIYO NIPPON SANSO CORP (JP)
TRI CHEMICAL LAB INC (JP)
TAJIMA NOBUO (JP)
NAGANO SHUJI (JP)
INAISHI YOSHIAKI (JP)
SHIMIZU HIDEHARU (JP)
OHASHI YOSHI (JP)
KADA TAKESHI (JP)
MATSUMOTO SHIGEKI (JP)
XU YONG HUA (JP)

International Classes:

C23C16/42; H01L21/312; H01L21/316; H01L21/768; H01L23/522

Domestic Patent References:

WO2009093581A1	2009-07-30
WO2010023964A1	2010-03-04

Foreign References:

JP2007523484A	2007-08-16
JPH04152553A	1992-05-26
JP2006519496A	2006-08-24
JP2009026866A	2009-02-05

Attorney, Agent or Firm:

SHIGA, Masatake et al. (JP)
Masatake Shiga (JP)

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