Title:
LIGHT EMITTING DIODE EPITAXIAL WAFER, LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/124504
Kind Code:
A1
Abstract:
A light-emitting diode epitaxial wafer (10), a light-emitting diode chip (20) and a manufacturing method therefor. The light-emitting diode epitaxial wafer (10) comprises: a substrate (11); a protective layer (12) provided on one side of the substrate (11); and a light-emitting structure (13) provided on the side of the protective layer (12) facing away from the substrate (11), wherein the light-emitting structure (13) comprises a light-emitting layer (132), and a band gap of the protective layer (12) is less than or equal to a band gap of the light-emitting layer (132).
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Inventors:
XIE XIANGWEI (CN)
HSU CHENKE (CN)
HSU CHENKE (CN)
Application Number:
PCT/CN2022/139424
Publication Date:
June 20, 2024
Filing Date:
December 15, 2022
Export Citation:
Assignee:
XIAMEN EXTREMELY PQ DISPLAY TECH CO LTD (CN)
International Classes:
H01L33/00; H01L33/06; H01L33/12; H01L33/14; H01L33/32
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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