Title:
MATERIAL FOR THIN FILM FORMATION, THIN FILM FORMED THEREFROM AND METHOD OF FORMING THIN FILM
Document Type and Number:
WIPO Patent Application WO/2006/137405
Kind Code:
A1
Abstract:
A material for thin film formation comprised of an Ag-based composition containing 0.01 to 35 at% (atomic percent) of C wherein at least one member selected from the group of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Hf, Ta, W and Re, the group of Ru, Rh, Pd, Ir, Pt and Au and the group of B, N, Al, Si, P, Ga, Ge, In, Sn, Sb, Mg, Te and Bi may be contained in an amount of 0.01 to 10 at%. A thin film excelling in heat resistance while retaining a high reflectance can be formed from this material for thin film formation.
Inventors:
FURUYAMA KOICHI (JP)
MOTOBAYASHI HIDEFUMI (JP)
OE SATORU (JP)
MOTOBAYASHI HIDEFUMI (JP)
OE SATORU (JP)
Application Number:
PCT/JP2006/312339
Publication Date:
December 28, 2006
Filing Date:
June 20, 2006
Export Citation:
Assignee:
TOSHIMA MFG CO LTD (JP)
FURUYAMA KOICHI (JP)
MOTOBAYASHI HIDEFUMI (JP)
OE SATORU (JP)
FURUYAMA KOICHI (JP)
MOTOBAYASHI HIDEFUMI (JP)
OE SATORU (JP)
International Classes:
C23C14/14; C23C14/34; G11B7/258; G11B7/2585; G11B7/259; G11B7/2595
Foreign References:
| JPS61133349A | 1986-06-20 | |||
| JPS62195815A | 1987-08-28 | |||
| JP2002319185A | 2002-10-31 | |||
| JP2002015464A | 2002-01-18 | |||
| JPH03156753A | 1991-07-04 |
Attorney, Agent or Firm:
Kurauchi, Motohiro (13-11 Nihonbashi 3-chom, Chuo-ku Tokyo 27, JP)
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