Title:
MEMORY DEVICE AND OPERATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/108383
Kind Code:
A1
Abstract:
A memory device includes an array of memory cells in a plurality of memory strings and arranged in a plurality of rows of memory cells. The memory device also includes a plurality of word lines respectively coupled to the plurality of rows of memory cells, and a peripheral circuit coupled to the plurality of word lines and configured to perform a read operation on a selected row of memory cells of the plurality of rows of memory cells. The selected row of memory cells is coupled to a selected word line, wherein the peripheral circuit is configured to apply a word line voltage on each of the plurality of word lines and determine a highest threshold voltage of the plurality of rows of memory cells based on a change of a word line capacitance loading in response to the word line voltage.
Inventors:
GUO XIAOJIANG (CN)
Application Number:
PCT/CN2021/137667
Publication Date:
June 22, 2023
Filing Date:
December 14, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/34; G11C5/14; G11C7/12; G11C8/08; G11C16/26
Foreign References:
| CN102446556A | 2012-05-09 | |||
| CN113196402A | 2021-07-30 | |||
| US20080310234A1 | 2008-12-18 | |||
| CN112102872A | 2020-12-18 |
Other References:
See also references of EP 4222745A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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