Title:
MEMORY
Document Type and Number:
WIPO Patent Application WO/2019/237308
Kind Code:
A1
Abstract:
The present application provides a memory, relating to the technical field of semiconductors, and can improve the integration density of the memory. A memory, each memory cell in a memory area comprising a transistor and an MTJ memory element; the bottom electrode of the MTJ memory element and the drain electrode of the transistor are electrically connected by means of a conductive structure; the memory area is provided with a plurality of wiring layers between the transistor and the MTJ memory element, and a dielectric layer is filled between each two adjacent wiring layers; the conductive structure comprises a first conductive part, and the first conductive part comprises a first metal wiring, a second metal wiring and a first through hole; the plurality of wiring layers comprise a first wiring layer, a second wiring layer and a third wiring layer; the first through hole penetrates through the dielectric layer between the first wiring layer and the second wiring layer and the third wiring layer; and a first connection channel is provided in the first through hole, the first connection channel is directly connected to a first metal wiring on the first wiring layer and a second metal wiring on the second wiring layer, and the first connection channel is not directly connected to the metal wiring on the third wiring layer.
Inventors:
YANG WEN (CN)
LIU YANXIANG (CN)
LIU YANXIANG (CN)
Application Number:
PCT/CN2018/091295
Publication Date:
December 19, 2019
Filing Date:
June 14, 2018
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/16
Foreign References:
| US9704919B1 | 2017-07-11 | |||
| CN107258016A | 2017-10-17 | |||
| CN101911326A | 2010-12-08 | |||
| CN1444274A | 2003-09-24 | |||
| CN102314927A | 2012-01-11 |
Other References:
See also references of EP 3800642A4
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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