Title:
METHOD FOR CLEANING SILICON WAFER, METHOD FOR PRODUCING SILICON WAFER, AND SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2024/105945
Kind Code:
A1
Abstract:
A method for cleaning a silicon wafer according to the present invention includes supplying an oxidizing agent from a position offset from the center of a silicon wafer in the radial direction in a surface layer modification step. A method for producing a silicon wafer according to the present invention includes performing the aforementioned method for cleaning a silicon wafer. In a silicon wafer according to the present invention, when a prescribed measurement is performed, the difference between the maximum value and the minimum value of the thickness of a natural oxide film in the radial direction of the silicon wafer is 0.1 or less, where the thickness of the measured natural oxide film is normalized using the maximum value.
Inventors:
FUKUSHIMA KAZUYA (JP)
YANAI RYOICHI (JP)
TAKAHASHI RYOSUKE (JP)
YANAI RYOICHI (JP)
TAKAHASHI RYOSUKE (JP)
Application Number:
PCT/JP2023/028976
Publication Date:
May 23, 2024
Filing Date:
August 08, 2023
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/304; H01L21/306; H01L21/316
Domestic Patent References:
| WO2003021657A1 | 2003-03-13 | |||
| WO2014010005A1 | 2014-01-16 |
Foreign References:
| JP2010153809A | 2010-07-08 | |||
| JPH06163662A | 1994-06-10 | |||
| JP2007027270A | 2007-02-01 | |||
| JP2004356223A | 2004-12-16 | |||
| JP2008159872A | 2008-07-10 | |||
| JP2022162915A | 2022-10-25 | |||
| JP2002203824A | 2002-07-19 | |||
| JP2004079755A | 2004-03-11 | |||
| JP2011029486A | 2011-02-10 | |||
| JP2007235032A | 2007-09-13 | |||
| JP2005191144A | 2005-07-14 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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