Title:
METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2024/099222
Kind Code:
A1
Abstract:
The present application relates to a method for manufacturing an insulated gate bipolar transistor, comprising: providing a substrate; annealing the back surface of the substrate; removing surface oxide on the back surface of the substrate; and performing hydrogen plasma treatment on the back surface of the substrate to reduce oxide in a near-surface layer on the back surface of the substrate. In this way, hydrogen ions in a plasma state can reduce silicon oxide (formed during annealing) in a shallow surface layer of the substrate. On one hand, the situation that leakage of devices is increased due to the fact that further penetration of silicon oxide affects a field stop injection concentration is avoided, and then the performance of the devices is improved. On the other hand, an ohmic contact between metal on the back surface and the substrate is prevented from being affected by silicon oxide, so that a turn-on voltage of devices is reduced, and the convergence of device parameters is improved. Additionally, the hydrogen ions in the plasma state cannot damage the back surface of the substrate, the physical bombardment onto the back surface of the substrate is avoided, and the damage to the substrate is prevented, so that a doping dose of a collector is prevented from being affected by the damage to the substrate, and the convergence of device parameters is further improved.
Inventors:
XIAO KUI (CN)
BIAN ZHENG (CN)
YAN QIN (CN)
BIAN ZHENG (CN)
YAN QIN (CN)
Application Number:
PCT/CN2023/129451
Publication Date:
May 16, 2024
Filing Date:
November 02, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L21/311
Foreign References:
| CN102254820A | 2011-11-23 | |||
| US6365516B1 | 2002-04-02 | |||
| JPH03116727A | 1991-05-17 | |||
| JPS62158859A | 1987-07-14 | |||
| US5627105A | 1997-05-06 | |||
| CN112382655A | 2021-02-19 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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