Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/015938
Kind Code:
A1
Abstract:
This method for manufacturing a silicon carbide semiconductor device comprises: a step for preparing a silicon carbide layer (10) that has a main surface (10a); a step for forming a first mask layer on the main surface (10a) so that the first mask layer is positioned above a first region (a part of a body region (13)), which is to be a channel region (CH), and has a first opening above regions that face each other with the first region being positioned therebetween; and a step for forming high-concentration impurity regions (n+ regions (2, 3)), which have a first conductivity type and have a higher impurity concentration than the impurity concentration of the silicon carbide layer, in the regions exposed through the first opening by implanting ions into the main surface (10a) through the first mask layer.
Inventors:
HORII TAKU (JP)
MASUDA TAKEYOSHI (JP)
KUBOTA RYOSUKE (JP)
MASUDA TAKEYOSHI (JP)
KUBOTA RYOSUKE (JP)
Application Number:
PCT/JP2014/066266
Publication Date:
February 05, 2015
Filing Date:
June 19, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Domestic Patent References:
| WO2004097926A1 | 2004-11-11 |
Foreign References:
| JP2006303323A | 2006-11-02 | |||
| JP2006303324A | 2006-11-02 | |||
| JP2012124536A | 2012-06-28 | |||
| JP2003318397A | 2003-11-07 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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