Title:
PRODUCTION METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/015937
Kind Code:
A1
Abstract:
A production method for a silicon carbide semiconductor device comprising: a step (S10) in which a silicon carbide substrate is prepared that includes a first main surface (10a) having an off angle relative to the {0001} plane; a step (S20) in which a first alignment mark (1) is formed upon the first main surface (10a); a step (S30) in which a protective film (30) that protects the first alignment mark (1) is formed; a step (S40) in which an epitaxial layer (a second epitaxial layer (12)) is formed upon the first main surface (10a) in a state in which the protective film (30) has been formed; and a step (S50) in which the first alignment mark (1) is used and the epitaxial layer (the second epitaxial layer (12)) is treated. As a result, a production method for a silicon carbide semiconductor device using a silicon carbide substrate comprising a main surface having an off angle can be provided that is capable of precise positioning even before and after a step in which an epitaxial layer is formed.
Inventors:
TAMASO HIDETO (JP)
Application Number:
PCT/JP2014/066265
Publication Date:
February 05, 2015
Filing Date:
June 19, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/027; H01L21/302; H01L21/3065; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2013161450A1 | 2013-10-31 | |||
| WO2013103024A1 | 2013-07-11 |
Foreign References:
| JP2007281157A | 2007-10-25 | |||
| JP2001139399A | 2001-05-22 | |||
| JP2006024866A | 2006-01-26 | |||
| JP2011135060A | 2011-07-07 | |||
| JP2008053363A | 2008-03-06 | |||
| JP2011100928A | 2011-05-19 | |||
| JP2007280978A | 2007-10-25 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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