METHOD FOR PREPARING RARE EARTH-BASED NITRIDE USING PLASMA ARC DISCHARGE TECHNIQUE

WIPO Patent Application WO/2014/175510

A1

The present invention relates to a method for preparing a rare earth-based nitride comprising the steps of: providing a rare earth metal parent material; charging the rare earth metal parent material into a plasma generating means; vaporizing the rare earth metal parent material into a plasma arc; generating and growing the nucleus of the rare earth-based nitride through a reaction between vapors of vaporized rare earth and a reaction gas; and forming a nanopowder of the rare earth-based nitride by inhibiting the growth of crystals of the nucleus of the rare earth-based nitride, wherein the rare earth-based nitride can be easily prepared through a plasma arc discharge technique in which the rare earth metal parent material is vaporized into the plasma arc.

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KIM DONG SOO (KR)
CHUNG KOOK CHAE (KR)
CHOI CHUL JIN (KR)
KIM JONG WOO (KR)

PCT/KR2013/005993

October 30, 2014

July 05, 2013

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KOREA MACH & MATERIALS INST (KR)

B22F9/14; B22F1/00

KR20050104256A	2005-11-02
JP2004263275A	2004-09-24
JP2008283141A	2008-11-20

TONDARE, V. N. ET AL.: "Field emission from open ended aluminum nitride nanotubes", APPLIED PHYSICS LETTERS, vol. 80, no. 25, 2002, pages 4813 - 4815

KASAN IP & LAW FIRM (KR)
특허법인 가산 (KR)

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