Title:
METHOD FOR PROCESSING SUBSTRATE, AND SYSTEM FOR PROCESSING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/024373
Kind Code:
A1
Abstract:
Provided is a method for processing a substrate. The method for processing a substrate includes (a) a step in which a substrate is provided on a substrate support in a processing chamber, the substrate having a base film and a resist film formed from a metal-containing resist and provided on the base film, wherein the metal-containing resist has a first region and a second region. The method for processing a substrate further includes (b) a step in which a processing gas containing carboxylic acid is supplied into a processing chamber, the substrate is exposed to the carboxylic acid, and the second region is selectively removed with respect to the first region, and thus dry developing is performed on the resist film. In (b), the pressure or partial pressure of the carboxylic acid is 0.3 Torr (40 Pa) to 100 Torr (13,332 Pa) (exclusive of 100 Torr).
Inventors:
NAKANE YUTA (JP)
ONO KENTA (JP)
KUMAKURA SHO (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
ONO KENTA (JP)
KUMAKURA SHO (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2023/023830
Publication Date:
February 01, 2024
Filing Date:
June 27, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
G03F7/36; G03F7/004
Domestic Patent References:
| WO2020264158A1 | 2020-12-30 |
Foreign References:
| JPS56107243A | 1981-08-26 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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