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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/024374
Kind Code:
A1
Abstract:
A semiconductor device (1) comprising: a semiconductor substrate (201) having a semiconductor element (2) configured thereon; a first electrode (231) and a second electrode (232), both disposed on one surface (22) of the semiconductor element; and a partition (242, 281) disposed so as to separate the first electrode from the second electrode on the one surface of the semiconductor element. The first electrode and the second electrode are each an Ni plating layer, and the Ni plating layer has a phosphorus concentration of 4 wt% or less. The partition is made of an insulating material and has a shape protruding toward the first electrode or the second electrode.

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Inventors:
MIWA SHIRO (JP)
KAKUTA KAZUYUKI (JP)
FUJIWARA TSUYOSHI (JP)
Application Number:
PCT/JP2023/023837
Publication Date:
February 01, 2024
Filing Date:
June 27, 2023
Export Citation:
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Assignee:
DENSO CORP (JP)
International Classes:
H01L23/522; H01L21/288; H01L21/3205; H01L21/768; H01L23/532; H01L29/78
Domestic Patent References:
WO2019187453A12019-10-03
Foreign References:
JP2018101662A2018-06-28
JP2001060760A2001-03-06
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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