Title:
METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN
Document Type and Number:
WIPO Patent Application WO2004102277
Kind Code:
B1
Abstract:
A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
Inventors:
XIAO HANZHONG (US)
ZHU HELEN H (US)
TANG KUO-LUNG
SADJADI S M REZA (US)
ZHU HELEN H (US)
TANG KUO-LUNG
SADJADI S M REZA (US)
Application Number:
PCT/US2004/013818
Publication Date:
March 03, 2005
Filing Date:
April 29, 2004
Export Citation:
Assignee:
LAM RES CORP (US)
XIAO HANZHONG (US)
ZHU HELEN H (US)
TANG KUO-LUNG
SADJADI S M REZA (US)
XIAO HANZHONG (US)
ZHU HELEN H (US)
TANG KUO-LUNG
SADJADI S M REZA (US)
International Classes:
G03F7/09; G03F7/36; H01L21/027; H01L21/033; H01L21/311; H01L21/768; (IPC1-7): G03F7/09; H01L21/768
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