NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Title:

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Document Type and Number:

WIPO Patent Application WO/2010/100709

Kind Code:

A1

Abstract:

Provided are a vertical nitride semiconductor device wherein generation of a leak current can be suppressed and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device (100) is a vertical HEMT, and is provided with an n- type GaN first nitride semiconductor layer (2), p+ type GaN second nitride semiconductor layers (6a, 6b), an n- type GaN third nitride semiconductor layer (9), and an n- type AlGaN fourth nitride semiconductor layer (8) forming heterojunction on a surface of the third nitride semiconductor layer (9). At positions isolated from the periphery of the third nitride semiconductor layer (9), openings (11a, 11b) which penetrate the third nitride semiconductor layer (9) and reach surfaces of the second nitride semiconductor layers (6a, 6b) are arranged. In the openings (11a, 11b), source electrodes (12a, 12b) are arranged. An etching damage (7b) in contact with the source electrodes (12a, 12b) is surrounded by a region where the etching damage is not formed.

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Inventors:

SUGIMOTO MASAHIRO (JP)
SOEJIMA NARUMASA (JP)
UESUGI TSUTOMU (JP)
KODAMA MASAHITO (JP)
ISHII EIKO (JP)

Application Number:

PCT/JP2009/053834

Publication Date:

September 10, 2010

Filing Date:

March 02, 2009

Export Citation:

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Assignee:

TOYOTA MOTOR CO LTD (JP)
TOYOTA CHUO KENKYUSHO KK (JP)
SUGIMOTO MASAHIRO (JP)
SOEJIMA NARUMASA (JP)
UESUGI TSUTOMU (JP)
KODAMA MASAHITO (JP)
ISHII EIKO (JP)

International Classes:

H01L29/778; H01L21/338; H01L29/812

Foreign References:

JP2005527969A	2005-09-15
JP2002314097A	2002-10-25
JP2008235543A	2008-10-02
JP2004260140A	2004-09-16

Other References:

None

Attorney, Agent or Firm:

KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)

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