NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Title:

NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2012/137462

Kind Code:

A1

Abstract:

This nitride semiconductor element is provided with: a p-type contact layer (26) of which the growth surface is the m plane; and an electrode (30) provided on the growth surface of the p-type contact layer (26). The p-type contact layer (26) has a thickness of 26-60 nm inclusive, and is a GaN semiconductor layer containing a concentration of oxygen that is at least the concentration of Mg of the p-type contact layer.

Inventors:

YOKOGAWA TOSHIYA
ANZUE NAOMI
INOUE AKIRA
KATO RYOU

Application Number:

PCT/JP2012/002268

Publication Date:

October 11, 2012

Filing Date:

April 02, 2012

Export Citation:

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Assignee:

PANASONIC CORP (JP)
YOKOGAWA TOSHIYA
ANZUE NAOMI
INOUE AKIRA
KATO RYOU

International Classes:

H01L33/14; H01L21/20; H01L21/28

Foreign References:

JP4568379B1	2010-10-27
JP2000164922A	2000-06-16
JP2000164512A	2000-06-16
JP2009170604A	2009-07-30
JPH10154829A	1998-06-09

Attorney, Agent or Firm:

OKUDA, SEIJI (JP)
Seiji Okuda (JP)

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