Title:
SILVER ALLOY SPUTTERING TARGET FOR FORMING ELECTROCONDUCTIVE FILM, AND METHOD FOR MANUFACTURE SAME
Document Type and Number:
WIPO Patent Application WO/2012/137461
Kind Code:
A1
Abstract:
Provided is a silver alloy sputtering target for forming an electroconductive film, the sputtering target being capable of inhibiting splashing even when high power is introduced into the target in line with increased target size, having excellent corrosion resistance and heat resistance, and being capable of forming a low-electrical-resistance film. Also provided is a method for manufacturing such a sputtering target. This silver alloy sputtering target for forming an electroconductive film comprises a silver alloy having a component composition containing a total of 0.1 to 1.5 mass% of Ga and/or Sn, with the balance being Ag and unavoidable impurities; or comprises a silver alloy having a component composition further containing 0.1 to 1.5 mass% of In. The average size of the crystal grains of the silver alloy is 120 to 400 μm, or 120 to 250 μm when In is included. The variation in the grain size of the crystal grains is 20% or less of the average grain size.
Inventors:
NONAKA SOHEI (JP)
KOMIYAMA SHOZO (JP)
KOMIYAMA SHOZO (JP)
Application Number:
PCT/JP2012/002266
Publication Date:
October 11, 2012
Filing Date:
April 02, 2012
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
NONAKA SOHEI (JP)
KOMIYAMA SHOZO (JP)
NONAKA SOHEI (JP)
KOMIYAMA SHOZO (JP)
International Classes:
H01L21/28; C23C14/34; H01L21/285; H01L51/50; H05B33/10; H05B33/26
Domestic Patent References:
| WO2006132414A1 | 2006-12-14 | |||
| WO2006132415A1 | 2006-12-14 |
Foreign References:
| JP2005008983A | 2005-01-13 | |||
| JP2004192702A | 2004-07-08 | |||
| JP2009024212A | 2009-02-05 |
Attorney, Agent or Firm:
TAKAOKA, Ryoichi (JP)
Ryoichi Takaoka (JP)
Ryoichi Takaoka (JP)
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Claims: