Title:
PROCESS FOR PRODUCING InGaN
Document Type and Number:
WIPO Patent Application WO/2007/069523
Kind Code:
A1
Abstract:
This invention provides a process for producing InGaN that causes no significant
In segregation and can realize high crystallinity of an InGaN layer while improving
the composition ratio of In. The process for producing an InGaN layer comprises
growing an InGaN layer under conditions of a growth temperature of 700ºC
to 790ºC, a growth rate of 30 Å/min to 93 Å/min, and a trimethylindium
flow rate of 1.76 × 10-5 mol/min to 3.53 × 10-5
mol/min.
Inventors:
SONOBE MASAYUKI (JP)
ITO NORIKAZU (JP)
TSUTSUMI KAZUAKI (JP)
FUJIWARA TETSUYA (JP)
TAMAI SHINICHI (JP)
ITO NORIKAZU (JP)
TSUTSUMI KAZUAKI (JP)
FUJIWARA TETSUYA (JP)
TAMAI SHINICHI (JP)
Application Number:
PCT/JP2006/324438
Publication Date:
June 21, 2007
Filing Date:
December 07, 2006
Export Citation:
Assignee:
ROHM CO LTD (JP)
SONOBE MASAYUKI (JP)
ITO NORIKAZU (JP)
TSUTSUMI KAZUAKI (JP)
FUJIWARA TETSUYA (JP)
TAMAI SHINICHI (JP)
SONOBE MASAYUKI (JP)
ITO NORIKAZU (JP)
TSUTSUMI KAZUAKI (JP)
FUJIWARA TETSUYA (JP)
TAMAI SHINICHI (JP)
International Classes:
H01L21/205; C23C16/34; C30B29/38; H01L33/32; H01S5/323
Foreign References:
| JPH09321339A | 1997-12-12 | |||
| JPH11340580A | 1999-12-10 |
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (2-8 Toranomon 1-chom, Minato-ku Tokyo 01, JP)
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