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Title:
QUANTUM NANO-COMPOSITE SEMICONDUCTOR LASER AND QUANTUM NANO-COMPOSITE ARRAY
Document Type and Number:
WIPO Patent Application WO/2003/073570
Kind Code:
A1
Abstract:
Quantum wires (11) are formed by III-V compound selective growth on V-grooves of a semiconductor substrate with the V-grooves each extending perpendicularly to the direction Is of the propagation of a laser beam to be oscillated and arranged parallel to the direction Is. The quantum wires (11) are active layer regions arranged parallel to the direction Is with pitches that are each equal to an integral multiple of 1/4 of the in-medium wavelength in the laser active layer and each having an infinite length with respect to the stripe width of the laser. The quantum nano-composite semiconductor laser has at least one, desirably both of a low threshold and a stable oscillation frequency more satisfiable than those of conventional ones.

Inventors:
OGURA MUTSUO (JP)
Application Number:
PCT/JP2003/001975
Publication Date:
September 04, 2003
Filing Date:
February 24, 2003
Export Citation:
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Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
JAPAN SCIENCE & TECH CORP (JP)
OGURA MUTSUO (JP)
International Classes:
H01L29/12; H01S5/12; H01S5/34; H01L21/20; H01L21/205; H01S5/026; H01S5/10; H01S5/22; H01S5/40; (IPC1-7): H01S5/343; H01L29/06
Foreign References:
EP0494765A21992-07-15
JPH06275908A1994-09-30
EP0553994A11993-08-04
EP0406005A21991-01-02
JPH05145169A1993-06-11
JPH0349283A1991-03-04
JP2000352614A2000-12-19
US4302729A1981-11-24
EP0905837A21999-03-31
JP2000124441A2000-04-28
JP2001326421A2001-11-22
JPH11330619A1999-11-30
JP2001284712A2001-10-12
JPS5948975A1984-03-21
Other References:
TAE GEUN KIM ET AL.: "Performance of AlGaAs/GaAs quantum wire lasers fabricated on sub-μm-pitch gratings: in both distributed feedback-and wire-directions", LASERS AND ELECTRO-OPTICS EUROPE, CONFERENCE DIGEST. CMC6, 2000, XP002962196
CHAN SIK SON ET AL.: "Constant growth technique for vertical-stacked AlGaAs/GaAs quantum wires on submicron gratings", THE 7TH INTERNATIONAL WORKSHOP ON FEMTOSECOND TECHNOLOGY, FC-46, 2000, pages 196, XP002962197
CHAN SIK SON ET AL.: "Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices", JOURNAL OF CRYSTAL GROWTH, vol. 221, no. 1/4, 2000, pages 201 - 207, XP004226856
YASUHIKO TANUMA ET AL.: "III-zoku genshi hyomen kakusan seigyo MBE ni yoru InGaAs ryoshi saisen no sakusei", THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS GIJUTSU KENKYU HOKOKU, vol. 98, no. 385, 1998, pages 13 - 18, XP002962198
TAKEYOSHI SUGAYA ET AL.: "MBE ni okeru As2 o mochiita V-mizojo InGaAs/InAlAs ryoshi saisen no sakusei", DAI 44 KAI OYO BUTSURIGAKU KANREN RENGO KOENKAI YOKOSHU, 1997, pages 1332, XP002962199
KIM J.K. ET AL.: "Design parameters for lateral carrier confinement in quantum-dot lasers", APPLIED PHYSICS LETTERS, vol. 74, no. 19, 1999, pages 2752 - 2754, XP000834654
See also references of EP 1480304A4
Attorney, Agent or Firm:
Fukuda, Kenzo (6-13 Nishishinbashi 1-chom, Minato-ku Tokyo, JP)
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