RANGE SENSOR AND RANGE IMAGE SENSOR - HAMAMATSU PHOTONICS KK

Title:

RANGE SENSOR AND RANGE IMAGE SENSOR

Document Type and Number:

WIPO Patent Application WO/2011/065286

Kind Code:

A1

Abstract:

Disclosed is a range image sensor which has improved aperture ratio and is capable of obtaining a range image that has a good S/N ratio. Specifically disclosed is a range image sensor (RS) , which comprises an imaging region that is composed of a plurality of one-dimensionally arranged units and provided on a semiconductor substrate (1), and which obtains a range image based on the charge amounts outputted from the units. Each unit comprises: a photosensitive region; two pairs of third semiconductor regions (9a, 9b) which face each other with a photogate electrode (PG) interposed therebetween in the facing direction of first and second long sides (L1, L2); first and second transfer electrodes (TX1, TX2) which are respectively provided between the third semiconductor regions (9a, 9b) and the photogate electrode (PG); fourth semiconductor regions (11a, 11b) which face each other with the photogate electrode (PG) interposed therebetween in the facing direction of the first and second long sides (L1, L2) and are respectively arranged between the third semiconductor regions (9a, 9b); and third transfer electrodes (TX3) which are respectively provided between the fourth semiconductor regions (11a, 11b) and the photogate electrode (PG).

Inventors:

SUZUKI TAKASHI (JP)
MASE MITSUHITO (JP)

Application Number:

PCT/JP2010/070601

Publication Date:

June 03, 2011

Filing Date:

November 18, 2010

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
SUZUKI TAKASHI (JP)
MASE MITSUHITO (JP)

International Classes:

G01S7/4863; G01S17/894; H01L27/146

Domestic Patent References:

WO2007119626A1	2007-10-25
WO2010013811A1	2010-02-04
WO2007026779A1	2007-03-08

Foreign References:

JP2004294420A	2004-10-21
JP2008008700A	2008-01-17
JP2007150008A	2007-06-14

Other References: