Title:
RINSE SOLUTION FOR REMOVAL OF PLASM ETCHING RESIDUES
Document Type and Number:
WIPO Patent Application WO/2010/025624
Kind Code:
A1
Abstract:
A rinse solution for removal of plasm etching residues includes solvent，water and fluoride. The rinse solution also includes a kind of stelliform polymer with pigment affinity group. The rinse solution can be used to remove plasm etching residues. And the corrosion rate of the rinse solution to some metals especially such as Al and to some non-metals is low. The rinse solution has larger operation window.
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Inventors:
LIU BING (CN)
PENG LIBBERT HONGXIU (CN)
YU JOEY HAO (CN)
PENG LIBBERT HONGXIU (CN)
YU JOEY HAO (CN)
Application Number:
PCT/CN2009/001001
Publication Date:
March 11, 2010
Filing Date:
September 04, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS TECHNOLO (CN)
LIU BING (CN)
PENG LIBBERT HONGXIU (CN)
YU JOEY HAO (CN)
LIU BING (CN)
PENG LIBBERT HONGXIU (CN)
YU JOEY HAO (CN)
International Classes:
G03F7/42; H01L21/02; C11D1/66; C23G1/06
Domestic Patent References:
| WO2005057281A2 | 2005-06-23 |
Foreign References:
| CN1982426A | 2007-06-20 | |||
| CN100410357C | 2008-08-13 | |||
| CN101412948A | 2009-04-22 | |||
| CN101412949A | 2009-04-22 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (New Huang Pu Financial BuildingNo. 61 East Nanjing Road, Shanghai 2, CN)
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