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Title:
SEMICONDUCTOR DEVICE COMPRISING A FERROELECTRIC MESEMICONDUCTOR DEVICE COMPRISING A FERROELECTRIC MEMORY ELEMENT WITH A LOWER ELECTRODE PROVIDED WITH MORY ELEMENT WITH A LOWER ELECTRODE PROVIDED WITH AN OXYGEN BARRIER AN OXYGEN BARRIER
Document Type and Number:
WIPO Patent Application WO1996010845
Kind Code:
A3
Abstract:
The invention relates to a semiconductor device comprising a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and comprises a layer with a conductive metal oxide (112) and a layer (111) comprising platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. According to the invention, the device is characterized in that the layer comprising platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby.

Inventors:
WOLTERS ROBERTUS ADRIANUS MARI
KEMPERMAN JOHANNA HENRIKA HELE
Application Number:
PCT/IB1995/000799
Publication Date:
June 06, 1996
Filing Date:
September 26, 1995
Export Citation:
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Assignee:
PHILIPS ELECTRONICS NV (NL)
PHILIPS NORDEN AB (NL)
International Classes:
H01L21/28; H01L21/8242; H01L27/10; H01L27/108; H01L27/115; H01L21/8247; H01L29/43; H01L29/788; H01L29/792; (IPC1-7): H01L29/43; H01L29/57; H01L21/223; H01L21/2232
Foreign References:
US5471363A1995-11-28
US5293510A1994-03-08
US5142437A1992-08-25
EP0495114A11992-07-22
US5003428A1991-03-26
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