Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2021/241448
Kind Code:
A1
Abstract:
The present invention comprises: (a) a step in which a first gas that contains a semiconductor element and chlorine is supplied to a substrate and a chlorine-containing semiconductor layer is formed on an insulating film provided on a surface of the substrate; and (b) a step in which a second gas that contains a semiconductor element is supplied to the substrate and a semiconductor film is formed on the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer formed in (a) is at least 1.0 × 1020 atoms/cm3 and no greater than 1.0 × 1022 atoms/cm3.
Inventors:
TAKAHASHI MASAHIRO (JP)
HORITA HIDEKI (JP)
HORITA HIDEKI (JP)
Application Number:
PCT/JP2021/019395
Publication Date:
December 02, 2021
Filing Date:
May 21, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/205; C23C16/24; C23C16/455
Domestic Patent References:
| WO2017018271A1 | 2017-02-02 |
Foreign References:
| JP2012049517A | 2012-03-08 | |||
| JP2001352087A | 2001-12-21 | |||
| JPH1126385A | 1999-01-29 | |||
| JP2013197307A | 2013-09-30 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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