Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/122901
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductors. Provided are a semiconductor device and a manufacturing method therefor, and an electronic device. By means of the present application, an equivalent oxide thickness (EOT) can be reduced. The semiconductor device comprises a transistor which has a high-k metal gate (HKMG) structure. The HKMG structure comprises a dielectric layer, a high-k oxide layer and a composite layer, wherein the high-k oxide layer covers the dielectric layer; and the composite layer covers the high-k oxide layer, and the composite layer comprises a first metal oxide layer, a first metal layer and a second metal oxide layer, which are sequentially arranged in a stacked manner, the first metal oxide layer and the second metal oxide layer each comprising a conductive metal oxide, and the first metal oxide layer, the first metal layer and the second metal oxide layer containing the same metal elements.
Inventors:
ZHANG KEHAO (CN)
LIU XI (CN)
YE JOHN (CN)
LIN JUN (CN)
LIU XI (CN)
YE JOHN (CN)
LIN JUN (CN)
Application Number:
PCT/CN2021/141751
Publication Date:
July 06, 2023
Filing Date:
December 27, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/8238
Foreign References:
| US20080099851A1 | 2008-05-01 | |||
| CN110908530A | 2020-03-24 | |||
| US20140004695A1 | 2014-01-02 | |||
| US20140183651A1 | 2014-07-03 | |||
| US20160240382A1 | 2016-08-18 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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