Title:
SEMICONDUCTOR DEVICE AND METHOD OF FORMATION
Document Type and Number:
WIPO Patent Application WO2002003456
Kind Code:
A3
Abstract:
A semiconductor device and its method of formation are disclosed wherein a surface of a semiconductor substrate is planarized to form an interconnect (1244) within a dielectric layer (1243). The top surface of the dielectric layer is then recessed with respect to a top surface of the interconnect to form a step (201). An opaque film (301) is then deposited over the surface of the semiconductor substrate. The opaque film (301) is lithographically patterned and etched, wherein an alignment of the patterning layer (401) is accomplished using topographically discernable features (303) that are formed in the opaque film (301) in regions where the step (201) between the interconnect (1244) and dielectric layer (1243) is produced.
Inventors:
SHROFF MEHUL D
GRIGG PHILIP G
GRIGG PHILIP G
Application Number:
PCT/US2001/020947
Publication Date:
June 13, 2002
Filing Date:
July 02, 2001
Export Citation:
Assignee:
MOTOROLA INC (US)
International Classes:
H01L21/3205; H01L21/60; H01L23/52; H01L21/768; H01L23/485; H01L23/525; H01L23/532; H01L23/544; (IPC1-7): H01L21/768; H01L21/60
Domestic Patent References:
| WO1999008314A1 | 1999-02-18 |
Foreign References:
| US5863825A | 1999-01-26 | |||
| US6020263A | 2000-02-01 |
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