Title:
HIGHLY CONFORMAL TITANIUM NITRIDE DEPOSITION PROCESS FOR HIGH ASPECT RATIO STRUCTURES
Document Type and Number:
WIPO Patent Application WO2002003455
Kind Code:
A3
Abstract:
Process for forming highly conformal titanium nitride on a silicon substrate. A gaseous reaction mixture of titanium tetrachloride and ammonia is passed over the semiconductor substrate surface maintained at a temperature of about 350 DEG C to about 800 DEG C. The r atio of titanium tetrachloride to ammonia is about 5:1 to 20:1. The high degree of conformality achieved by the process of the invention allows TiN layers to be deposited on structures with high aspect ratios and on complicated, three-dimensional structures without forming a large seam or void.
Inventors:
JAMMY RAJARAO
FALTERMEIER CHERYL G
SCHROEDER UWE
WONG KWONG HON
FALTERMEIER CHERYL G
SCHROEDER UWE
WONG KWONG HON
Application Number:
PCT/US2001/020913
Publication Date:
June 13, 2002
Filing Date:
June 29, 2001
Export Citation:
Assignee:
INFINEON TECHNOLOGIES CORP (US)
IBM (US)
IBM (US)
International Classes:
C23C16/04; C23C16/34; H01L21/02; H01L21/285; H01L21/768; H01L21/8242; (IPC1-7): H01L21/768; C23C16/34; H01L21/285
Foreign References:
| US5525543A | 1996-06-11 | |||
| US5534730A | 1996-07-09 |
Other References:
JIANG C ET AL: "MORPHOLOGY AND PREFERRED ORIENTATION OF TITANIUM NITRIDE PLATES PREPARED BY CHEMICAL VAPOUR DEPOSITION", JOURNAL OF MATERIALS SCIENCE, CHAPMAN AND HALL LTD. LONDON, GB, vol. 29, no. 3, 1 February 1994 (1994-02-01), pages 669 - 675, XP001053624, ISSN: 0022-2461
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 08 6 October 2000 (2000-10-06)
HU J, YIN LIN, MENG-CHUN KUO, CHEN F, MING XI, MEI CHANG, LANDO Z P, NARWANKAR P, ELLWANGER R: "Chemical Vapor Deposition of Titanium Nitride from Titanium Tetrachloride and Ammonia for Advanced DRAM Applications", MATERIALS RESEARCH SOCIETY, 1999, pages 593 - 298, XP008001907
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 08 6 October 2000 (2000-10-06)
HU J, YIN LIN, MENG-CHUN KUO, CHEN F, MING XI, MEI CHANG, LANDO Z P, NARWANKAR P, ELLWANGER R: "Chemical Vapor Deposition of Titanium Nitride from Titanium Tetrachloride and Ammonia for Advanced DRAM Applications", MATERIALS RESEARCH SOCIETY, 1999, pages 593 - 298, XP008001907
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