Title:
METHOD FOR ETCHING DUAL DAMASCENE STRUCTURES IN ORGANOSILICATE GLASS
Document Type and Number:
WIPO Patent Application WO2002003454
Kind Code:
A3
Abstract:
Method for forming dual damascene etch structures in wafers, and semiconductor devices formed according to the method. The present invention utilizes the two-step etch process to form dual damascene structures in organosilicate dielectric layers. According to one embodiment of the present invention, a first etch step is undertaken utilizing a first, low selectivity etchant, which etches completely through the trench dielectric (8) and almost completely through the via dielectric (12), leaving a small remainder of the via dielectric over the barrier layer protecting metalized objects protected by the barrier layer (14). After the first etch step, a second etch step is performed utilizing a second, highly selective etchant. This second etch step is conducted with little damage to the barrier layer. An alternative embodiment of the present invention contemplates a "trench-first" etch strategy.
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Inventors:
FLANNER JANET M (US)
MOREY IAN (SG)
MOREY IAN (SG)
Application Number:
PCT/US2001/018626
Publication Date:
May 23, 2002
Filing Date:
June 08, 2001
Export Citation:
Assignee:
LAM RES CORP (US)
FLANNER JANET M (US)
MOREY IAN (SG)
FLANNER JANET M (US)
MOREY IAN (SG)
International Classes:
H01L21/311; H01L21/316; H01L21/3065; H01L21/768; H01L21/318; (IPC1-7): H01L21/768; H01L21/311
Domestic Patent References:
WO2000003432A1 | 2000-01-20 | |||
WO2001003179A1 | 2001-01-11 |
Foreign References:
US5970336A | 1999-10-19 | |||
US6072227A | 2000-06-06 |
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