Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/063683
Kind Code:
A1
Abstract:
One semiconductor chip is provided with an SJ-MOSFET and an IGBT. In addition, the formation of a depletion layer is accelerated when applying a reverse voltage to an SJ-MOSFET section 10 by balancing the carrier amount of an n-type column 54 and the carrier amount of a p-type column 56. The provided semiconductor device is equipped with: a semiconductor substrate; a super-junction structure formed on the surface side of the semiconductor substrate; and a field-stop layer formed on the rear-surface side of the semiconductor substrate in a location overlapping the super-junction structure, and formed so as not to contact the rear-surface-side end section of the super-junction structure.
Inventors:
NAITO TATSUYA (JP)
OTSUKI MASAHITO (JP)
OTSUKI MASAHITO (JP)
Application Number:
PCT/JP2015/077376
Publication Date:
April 28, 2016
Filing Date:
September 28, 2015
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/265; H01L21/322; H01L21/336; H01L21/8234; H01L27/04; H01L27/08; H01L27/088; H01L29/06; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| WO2013141181A1 | 2013-09-26 | |||
| WO2012157772A1 | 2012-11-22 |
Foreign References:
| JP2008078282A | 2008-04-03 | |||
| JP2009525610A | 2009-07-09 | |||
| JP2013138172A | 2013-07-11 | |||
| JP2013247248A | 2013-12-09 | |||
| JP2006344779A | 2006-12-21 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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