Title:
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/139687
Kind Code:
A1
Abstract:
The present invention provides a semiconductor device which is capable of reducing the stress to be generated in a capacitor due to a temperature change of the semiconductor device, thereby being capable of suppressing breakage of the capacitor. This semiconductor device is provided with an insulating substrate, a semiconductor element, a capacitor, a first lead having a surface, and a second lead having a surface; the insulating substrate is provided with an insulating layer and a conductor pattern that is provided on the insulating layer; the semiconductor element is bonded onto the conductor pattern; the first lead is electrically connected to the semiconductor element; the surface of the first lead and the surface of the second lead face each other; the capacitor is positioned between the surface of the first lead and the surface of the second lead facing each other; and the capacitor is connected to the first lead and the second lead.
Inventors:
NAKAHARA KENTA (JP)
Application Number:
PCT/JP2022/001785
Publication Date:
July 27, 2023
Filing Date:
January 19, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01G4/30; H01L23/48; H01L25/00; H01L25/07; H01L25/18
Domestic Patent References:
| WO2018229820A1 | 2018-12-20 |
Foreign References:
| JPH01298750A | 1989-12-01 | |||
| JP2017152525A | 2017-08-31 | |||
| JP2000049042A | 2000-02-18 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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